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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14463
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dc.contributor.authorNormand, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorTserepi, A.en
dc.contributor.authorTsoi, E.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorAidinis, K.en
dc.contributor.authorZhang, S.en
dc.contributor.authorvan den Berg, J.en
dc.date.accessioned2015-11-24T17:38:14Z-
dc.date.available2015-11-24T17:38:14Z-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14463-
dc.rightsDefault Licence-
dc.subjectarraysen
dc.titleSilicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniquesen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.secondary<Go to ISI>://000171061800137-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2001-
heal.abstractMultiple-tunnel junction devices with a source-drain electrode separation ranging from 50 to 200 nm and non-linear source-drain current-voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source-drain separation. (C) 2001 Elsevier Science B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameMicroelectronic Engineeringen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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