Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/14461| Title: | Si spreading in lattice-matched In0.53Ga0.47As grown by molecular-beam epitaxy |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | delta-doped semiconductor,electron-concentration,transport-properties,surface segregation,doping layers,gaas,mobility,silicon,mbe,quantum |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/14461 |
| ISSN: | 1098-0121 |
| Link: | <Go to ISI>://000080114800050 |
| Publisher: | American Physical Society |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1999-Si spreading in lattice.pdf | 192.75 kB | Adobe PDF | View/Open |
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