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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14460
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dc.contributor.authorSkuras, E.en
dc.contributor.authorStanley, C. R.en
dc.contributor.authorLong, A. R.en
dc.contributor.authorJohnson, E. A.en
dc.contributor.authorMacKinnon, A.en
dc.contributor.authorYaguchi, H.en
dc.contributor.authorvan der Burgt, M.en
dc.contributor.authorSingleton, J.en
dc.date.accessioned2015-11-24T17:38:13Z-
dc.date.available2015-11-24T17:38:13Z-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14460-
dc.rightsDefault Licence-
dc.subjectmolecular-beam epitaxyen
dc.subjectdelta-doped gaasen
dc.subjectsien
dc.subjectmobilitiesen
dc.subjectsaturationen
dc.subjecttransporten
dc.titleShubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48Asen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1063/1.371627-
heal.identifier.secondary<Go to ISI>://000083729000104-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate1999-
heal.abstractThe Shubnikov-de Haas effect in InAlAs measured using pulsed magnetic fields up to 50 T is reported. The InAlAs samples were grown by molecular beam epitaxy (MBE) and were either delta or slab doped with silicon at densities up to 7 x 10(12) cm(-2). Comparison of experimental subband densities with those calculated self-consistently shows that spreading of Si occurs by surface segregation at growth temperatures of similar to 520 degrees C, similar to its behavior in MBE-grown InGaAs. In contrast to InGaAs, the InAlAs exhibits persistent photoconductivity which appears to be caused by a bulk defect rather than DX(Si) states. (C) 1999 American Institute of Physics. [S0021-8979(99)00423-5].en
heal.publisherAmerican Institute of Physicsen
heal.journalNameJournal of Applied Physicsen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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