Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14429
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dc.contributor.authorChao, C. C.en
dc.contributor.authorWang, T. C.en
dc.contributor.authorHo, R. M.en
dc.contributor.authorGeorgopanos, P.en
dc.contributor.authorAvgeropoulos, A.en
dc.contributor.authorThomas, E. L.en
dc.date.accessioned2015-11-24T17:38:00Z-
dc.date.available2015-11-24T17:38:00Z-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14429-
dc.rightsDefault Licence-
dc.subjectassemblyen
dc.subjectthin filmsen
dc.subjectnanostructuresen
dc.subjectporous materialsen
dc.subjectpolymeric materialsen
dc.subjectthin-filmsen
dc.subjectdiblock copolymeren
dc.subjectlithographyen
dc.subjectpolystyreneen
dc.subjectarraysen
dc.subjectorientationen
dc.subjecttemplatesen
dc.subjectpolydimethylsiloxaneen
dc.subjectnanolithographyen
dc.subjectnanostructuresen
dc.titleRobust Block Copolymer Mask for Nanopatterning Polymer Filmsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1021/Nn901370g-
heal.identifier.secondary<Go to ISI>://000276956800041-
heal.identifier.secondaryhttp://pubs.acs.org/doi/abs/10.1021/nn901370g-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2010-
heal.abstractThe formation of well-oriented cylinders with perpendicular morphology for polystyrene-b-polydimethylsiloxane (PS-PDMS) thin films was achieved by spin coating. The self-assembled PS-PDMS nanostructured thin films were used as templates for nanopatterning; the PDMS blocks can be oxidized as silicon oxy carbide microdomains, whereas the PS blocks were degenerated by a simple oxygen plasma treatment for one-step oxidization. As a result, freestanding silicon oxy carbide thin films with hexagonally packed nanochannels were directly fabricated and used as masks for pattern transfer to underlying polymeric materials by oxygen reaction ion etching (RIE) to generate topographic nanopatterns. By taking advantage of robust property and high etching selectivity of the SiOC thin films under oxygen RIE, this nanoporous thin film can be used as an etch-resistant and reusable mask for pattern transfer to various polymeric materials. This approach demonstrates a simple, convenient, and cost-effective nanofabrication technique to create the topographic nanopatterns of polymeric materials.en
heal.publisherAmerican Chemical Societyen
heal.journalNameACS Nanoen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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