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dc.contributor.authorMcelhinney, M.en
dc.contributor.authorSkuras, E.en
dc.contributor.authorHolmes, S. N.en
dc.contributor.authorJohnson, E. A.en
dc.contributor.authorLong, A. R.en
dc.contributor.authorStanley, C. R.en
dc.date.accessioned2015-11-24T17:37:47Z-
dc.date.available2015-11-24T17:37:47Z-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14404-
dc.rightsDefault Licence-
dc.subjectgaasen
dc.titleQuantum Transport Measurements on Si Delta-Doped and Slab-Doped In0.53ga0.47as Grown by Molecular-Beam Epitaxyen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1016/0022-0248(95)80219-3-
heal.identifier.secondary<Go to ISI>://A1995RC73100051-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate1995-
heal.abstractA series of high quality delta-doped In-0.53,Ga0.47As samples have been grown lattice matched to InP with design doping densities in the range 2 x 10(12) to 5 x 10(12) cm(-2). Analysis of the individual sub-band densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.en
heal.publisherElsevieren
heal.journalNameJournal of Crystal Growthen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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