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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14382
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dc.contributor.authorNormand, P.en
dc.contributor.authorDimitrakis, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorSkarlatos, D.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorBonafos, C.en
dc.contributor.authorCoffin, H.en
dc.contributor.authorBenassayag, G.en
dc.contributor.authorClaverie, A.en
dc.contributor.authorSoncini, V.en
dc.contributor.authorAgarwal, A.en
dc.contributor.authorSohl, C.en
dc.contributor.authorAmeen, M.en
dc.date.accessioned2015-11-24T17:37:37Z-
dc.date.available2015-11-24T17:37:37Z-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14382-
dc.rightsDefault Licence-
dc.subjectsilicon nanocrystalsen
dc.subjection beam synthesisen
dc.subjectsilicon implantationen
dc.subjectnanocrystal memoryen
dc.subjectnon-volatile memoryen
dc.subject2-d arraysen
dc.subjectthin sio2en
dc.subjectimplantationen
dc.titleProcessing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applicationsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDOI 10.1016/j.mee.2004.03.043-
heal.identifier.secondary<Go to ISI>://000222145400130-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0167931704002114/1-s2.0-S0167931704002114-main.pdf?_tid=b02cfb0cdb7294528c827bbeefdec645&acdnat=1339662557_3510efc4338ffca481b86d7f374cdc84-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2004-
heal.abstractRecent fabrication issues encountered during the synthesis of silicon nanocrystals in thin SiO2 films by the technique of ultra-low energy ion implantation and subsequent thermal treatment (ULE-IBS) are presented. The effects of charge neutralization of the implanted species, energy contamination and post-implantation cleaning process on the electrical and structural properties of the processed oxides are described, with emphasis upon the technological options to control them. While much research is still required for industrial exploitation of ULE-IBS in the fabrication of competitive and reproducible memory structures, promising results for prototype devices aiming at low-voltage non-volatile memory applications have been obtained and are here reported. (C) 2004 Elsevier B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameMicroelectronic Engineeringen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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