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https://olympias.lib.uoi.gr/jspui/handle/123456789/14340Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Matenoglou, G. M. | en |
| dc.contributor.author | Koutsokeras, L. E. | en |
| dc.contributor.author | Patsalas, P. | en |
| dc.date.accessioned | 2015-11-24T17:37:19Z | - |
| dc.date.available | 2015-11-24T17:37:19Z | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14340 | - |
| dc.rights | Default Licence | - |
| dc.subject | electrical conductivity | en |
| dc.subject | lattice constants | en |
| dc.subject | metallurgy | en |
| dc.subject | semiconductor thin films | en |
| dc.subject | solid-state plasma | en |
| dc.subject | stoichiometry | en |
| dc.subject | work function | en |
| dc.subject | thin-films | en |
| dc.subject | microstructure | en |
| dc.subject | metallization | en |
| dc.subject | contacts | en |
| dc.title | Plasma energy and work function of conducting transition metal nitrides for electronic applications | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1063/1.3119694 | - |
| heal.identifier.secondary | <Go to ISI>://000265285200042 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2009 | - |
| heal.abstract | The combination of electrical conductivity, chemical and metallurgical stability, refractory character, having lattice constants that are close to those of III-nitrides makes transition metal nitrides promising candidates for electronics and device applications. We study the structure, stability, and the plasma energy of stoichiometric, transition metal nitrides of similar crystal quality as well as the widest variety of their ternaries ever reported. We establish the phase spaces of the plasma energy (6.9-10.5 eV) and the work function (3.7-5.1 eV) of these complex nitrides with their lattice constant (0.416-0.469 nm) and we investigate the limits of their applications. | en |
| heal.publisher | American Institute of Physics | en |
| heal.journalName | Applied Physics Letters | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Patsalas-2009-Pla.pdf | 788.85 kB | Adobe PDF | View/Open |
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