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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14312
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dc.contributor.authorPearson, J. L.en
dc.contributor.authorHolland, M. C.en
dc.contributor.authorStanley, C. R.en
dc.contributor.authorLong, A. R.en
dc.contributor.authorSkuras, E.en
dc.contributor.authorAsenov, A.en
dc.contributor.authorDavies, J. H.en
dc.date.accessioned2015-11-24T17:37:04Z-
dc.date.available2015-11-24T17:37:04Z-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14312-
dc.rightsDefault Licence-
dc.subjectpseudomorphic hemten
dc.subjectmolecular beam epitaxyen
dc.subjecttransport measurementsen
dc.subjectingaasen
dc.subjectalloy scatteringen
dc.subjecttransporten
dc.titleOptimization of layer structure for InGaAs channel pseudomorphic HEMTsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1016/S0022-0248(98)01462-6-
heal.identifier.secondary<Go to ISI>://000080406000162-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate1999-
heal.abstractElectron scattering in the pseudomorphic InGaAs channel of an InGaAs-AlGaAs heterostructure grown by molecular beam epitaxy has been studied at low temperatures to optimize the layer structure for use at 300 K in high-frequency transistors (p-HEMTs). (C) 1999 Elsevier Science B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameJournal of Crystal Growthen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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