1. Repository of OAI
  2. ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
  3. Σχολή Θετικών Επιστημών
  4. Τμήμα Μηχανικών Επιστήμης Υλικών
  5. Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)
Ελληνικά   English  
Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14299
Full metadata record
DC FieldValueLanguage
dc.contributor.authorGautier, S.en
dc.contributor.authorKomninou, P.en
dc.contributor.authorPatsalas, P.en
dc.contributor.authorKehagias, T.en
dc.contributor.authorLogothetidis, S.en
dc.contributor.authorDimitriadis, C. A.en
dc.contributor.authorNouet, G.en
dc.date.accessioned2015-11-24T17:36:55Z-
dc.date.available2015-11-24T17:36:55Z-
dc.identifier.issn0268-1242-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14299-
dc.rightsDefault Licence-
dc.subjectn-type ganen
dc.subjectnitride thin-filmsen
dc.subjectresistance ohmic contactsen
dc.subjectsi-doped ganen
dc.subjecttitanium nitrideen
dc.subjectgallium nitrideen
dc.subjectthermal-stabilityen
dc.subjecthexagonal ganen
dc.subjectti/al-contactsen
dc.subjectlow-temperatureen
dc.titleOptical and electrical properties of TiN/n-GaN contacts in correlation with their structural propertiesen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1088/0268-1242/18/6/334-
heal.identifier.secondary<Go to ISI>://000183851500039-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2003-
heal.abstractThe optical and electrical properties of TiN contacts on Si-doped GaN were investigated in correlation with their structural properties. Stoichiometric TiN films were directly deposited on 2.5 mum thick n-GaN by dc reactive magnetron sputtering at room temperature, while the stoichiometry and the structural characteristics of the TiN films were determined by in situ spectroscopic ellipsometry (SE). SE was also used for characterization of the GaN surface and for chemical etching of gallium oxide. Current-voltage measurements showed an ohmic behaviour for the as-deposited and annealed TiN/GaN samples. The specific contact resistivity was found to be 4.5 x 10(-3) Omega cm(2) for the as-deposited TiN film, becoming as low as 5.9 x 10(-4) Omega cm(2) after annealing at 400 degreesC. Further thermal treatment over 500 degreesC resulted in significant TiN oxidation and poor adhesion of the TiN film on the GaN, leading to an increase in specific contact resistivity. Transmission electron microscopy revealed structural and interfacial contact changes after high thermal treatment.en
heal.publisherIOP Publishing Ltden
heal.journalNameSemiconductor Science and Technologyen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

Show simple item record
Files in This Item:
File Description SizeFormat 
Patsalas-2003-Opt.pdf358.87 kBAdobe PDFView/Open    Request a copy
Show simple item record  


This item is licensed under a Creative Commons License Creative Commons