Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14240
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dc.contributor.authorNormand, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorDimitrakis, P.en
dc.contributor.authorSkarlatos, D.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorBonafos, C.en
dc.contributor.authorBen Assayag, G.en
dc.contributor.authorCherkashin, N.en
dc.contributor.authorClaverie, A.en
dc.contributor.authorVan Den Berg, J. A.en
dc.contributor.authorSoncini, V.en
dc.contributor.authorAgarwal, A.en
dc.contributor.authorAmeen, M.en
dc.contributor.authorPerego, M.en
dc.contributor.authorFanciulli, M.en
dc.date.accessioned2015-11-24T17:36:22Z-
dc.date.available2015-11-24T17:36:22Z-
dc.identifier.issn0168-583X-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14240-
dc.rightsDefault Licence-
dc.subjectnanocrystalsen
dc.subjection beam synthesisen
dc.subjectnon-volatile memoryen
dc.subjectsilicon implantationen
dc.subjectsi-rich sio2-filmsen
dc.subjectthin sio2en
dc.subjectsemiconductor structureen
dc.subjectelectrical-propertiesen
dc.subjectsilicon nanocrystalsen
dc.subject2-d arraysen
dc.subjectimplantationen
dc.subjectchargeen
dc.subjectoxideen
dc.subjectdevicesen
dc.titleNanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applicationsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDOI 10.1016/j.nimb.2003.11.039-
heal.identifier.secondary<Go to ISI>://000189222100038-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0168583X03021517/1-s2.0-S0168583X03021517-main.pdf?_tid=a7c6b05c9c83fada9a0d2931c7220086&acdnat=1339662575_42b5add09aba45a244ce25db2c26a697-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2004-
heal.abstractAn overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications. (C) 2003 Elsevier B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameNuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atomsen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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