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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14226
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dc.contributor.authorDimitrakis, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorNormand, P.en
dc.contributor.authorSkarlatos, D.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorClaverie, A.en
dc.contributor.authorBenassayag, G.en
dc.contributor.authorBonafos, C.en
dc.contributor.authorChassaing, D.en
dc.contributor.authorCarrada, M.en
dc.contributor.authorSoncini, V.en
dc.date.accessioned2015-11-24T17:36:15Z-
dc.date.available2015-11-24T17:36:15Z-
dc.identifier.issn0921-5107-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14226-
dc.rightsDefault Licence-
dc.subjectsien
dc.subjectnanocrystalsen
dc.subjection implantationen
dc.subjectmemoryen
dc.subjectsingle-electronen
dc.titleMOS memory structures by very-low-energy-implanted Si in thin SiO2en
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1016/S0921-5107(02)00688-8-
heal.identifier.secondary<Go to ISI>://000184394900004-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0921510702006888/1-s2.0-S0921510702006888-main.pdf?_tid=8765ad619c998cc718b6284c13cafac6&acdnat=1339662566_ec56a0046ca11f5d462133bee0c72dc3-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2003-
heal.abstractThe electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 degreesC) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages. (C) 2003 Elsevier Science B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameMaterials Science and Engineering B-Solid State Materials for Advanced Technologyen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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