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DC Field | Value | Language |
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dc.contributor.author | Normand, P. | en |
dc.contributor.author | Kapetanakis, E. | en |
dc.contributor.author | Tsoukalas, D. | en |
dc.contributor.author | Kamoulakos, G. | en |
dc.contributor.author | Beltsios, K. | en |
dc.contributor.author | Van den Berg, J. | en |
dc.contributor.author | Zhang, S. | en |
dc.date.accessioned | 2015-11-24T17:36:14Z | - |
dc.date.available | 2015-11-24T17:36:14Z | - |
dc.identifier.issn | 0928-4931 | - |
dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14224 | - |
dc.rights | Default Licence | - |
dc.subject | si | en |
dc.subject | implantation | en |
dc.subject | nanocrystals | en |
dc.subject | memory | en |
dc.subject | si | en |
dc.title | MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation | en |
heal.type | journalArticle | - |
heal.type.en | Journal article | en |
heal.type.el | Άρθρο Περιοδικού | el |
heal.identifier.secondary | <Go to ISI>://000170709600034 | - |
heal.language | en | - |
heal.access | campus | - |
heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
heal.publicationDate | 2001 | - |
heal.abstract | The electrical characteristics of Si nanocrystal-based MOS memory devices are studied. The nanocrystals are fabricated into 8-nm thin oxide by very low energy Si+ implantation at different doses and subsequent annealing. TEM work suggests that Si nanocrystals develop at a density, size and perfection that vary strongly with the implanted dose and these structural features are found compatible with the device transfer characteristics. (C) 2001 Elsevier Science B.V. All rights reserved. | en |
heal.publisher | Elsevier | en |
heal.journalName | Materials Science & Engineering C-Biomimetic and Supramolecular Systems | en |
heal.journalType | peer reviewed | - |
heal.fullTextAvailability | TRUE | - |
Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
File | Description | Size | Format | |
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Beltsios-2001-MOS memory devices.pdf | 96.75 kB | Adobe PDF | View/Open Request a copy |
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