Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/14219
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dc.contributor.authorKokkinis, A.en
dc.contributor.authorValamontes, E. S.en
dc.contributor.authorGoustouridis, D.en
dc.contributor.authorGanetsos, T.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorRaptis, I.en
dc.date.accessioned2015-11-24T17:36:12Z-
dc.date.available2015-11-24T17:36:12Z-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/14219-
dc.rightsDefault Licence-
dc.subjectpoly(methyl methacrylate)en
dc.subjectthin filmen
dc.subjectlithographyen
dc.subjectdissolutionen
dc.subjectmultiwavelength interferometryen
dc.subjectelectron-beam lithographyen
dc.subjectpolymer-filmsen
dc.subjectmultiwavelength interferometryen
dc.subjectphotoresist dissolutionen
dc.subjectresisten
dc.subjectpoly(methylmethacrylate)en
dc.subjectresolutionen
dc.subjectnanolithographyen
dc.subjectfabricationen
dc.subjectthicknessen
dc.titleMolecular weight and processing effects on the dissolution properties of thin poly(methyl methacrylate) filmsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDOI 10.1016/j.mee.2007.04.141-
heal.identifier.secondary<Go to ISI>://000253030100018-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0167931707003590/1-s2.0-S0167931707003590-main.pdf?_tid=3e9b4d2a84b324b83e33d8026032e690&acdnat=1339662523_b98674714ec07cd7027fce7366efbdd9-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2008-
heal.abstractAn experimental set-up based on multiwavelength interferometry, is applied in order to study in-situ the dissolution process of thin resist films. The interference function was the basis for a fitting algorithm, which analyses the experimental data and evaluates the progress of the resist thickness with time. The dissolution of various PMMA molecular weights (15 K, 350 K, 996 K) and resist thicknesses (20-300 nm), in various developers, consisting of mixtures of methyl iso butyl ketone (MIBK), iso propanol (IPA), H2O at various relative concentrations, was studied. Surface dissolution inhibition was shown in unexposed resists with high molecular weights and increased thickness in the case of MIBK-IPA 1-1 and IPA-H2O 7-3 developers. After that the whole dissolution process evolved at a steady rate. Dissolution of thick films proved to be unpredictable showing complex dissolution curves. Low molecular weight resists presented a smooth dissolution curve without dissolution inhibition. Samples exposed with small DUV doses, exhibited dissolution behavior similar to the unexposed cases, whereas high exposure doses, within the lithographically useful range, led to smooth dissolution behavior. In the case of MIBK-IPA 1-3 developer significant swelling was observed. (C) 2007 Elsevier B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameMicroelectronic Engineeringen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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