Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/14123Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, J. I. | en |
| dc.contributor.author | Brini, J. | en |
| dc.contributor.author | Kamarinos, G. | en |
| dc.contributor.author | Dimitriadis, C. A. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.contributor.author | Patsalas, P. | en |
| dc.date.accessioned | 2015-11-24T17:35:25Z | - |
| dc.date.available | 2015-11-24T17:35:25Z | - |
| dc.identifier.issn | 0169-4332 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/14123 | - |
| dc.rights | Default Licence | - |
| dc.subject | schottky barriers | en |
| dc.subject | low frequency noise | en |
| dc.subject | random walk of electrons | en |
| dc.subject | reactive magnetron sputtering | en |
| dc.subject | deposition temperature | en |
| dc.subject | titanium nitride | en |
| dc.subject | thin-films | en |
| dc.subject | barrier diodes | en |
| dc.subject | 1/f noise | en |
| dc.subject | silicon | en |
| dc.subject | contacts | en |
| dc.subject | metal | en |
| dc.title | Low frequency noise measurements on TiN/n-Si Schottky diodes | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1016/S0169-4332(98)00723-5 | - |
| heal.identifier.secondary | <Go to ISI>://000080163900076 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 1999 | - |
| heal.abstract | The deposition temperature dependence of the characteristics of TiNx/n-Si Schottky diodes fabricated via reactive magnetron sputtering, is studied through the current-voltage characterization and the low frequency excess noise measurements. As the deposition temperature was varied from room temperature up to 400 degrees C, both the ideality factor of the diode and the power spectral density of the noise current decreased. The analysis of the low frequency noise shows that the noise due to the trapping and detrapping at the interface due to the random walk of electrons via the modulation of the barrier height dominates the noise due to the mobility fluctuation, except at very low current levels, in these non-ideal diodes. It is found that the interface states density could be reduced by almost an order of magnitude by raising the deposition temperature up to 400 degrees C from room temperature. (C) 1999 Elsevier Science B.V. All rights reserved. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Applied Surface Science | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Patsalas-1999-Low frequency noise.pdf | 54.56 kB | Adobe PDF | View/Open Request a copy |
This item is licensed under a Creative Commons License
