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https://olympias.lib.uoi.gr/jspui/handle/123456789/13970Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Normand, P. | en |
| dc.contributor.author | Beltsios, K. | en |
| dc.contributor.author | Kapetanakis, E. | en |
| dc.contributor.author | Tsoukalas, D. | en |
| dc.contributor.author | Travlos, T. | en |
| dc.contributor.author | Stoemenos, J. | en |
| dc.contributor.author | Van Den Berg, J. | en |
| dc.contributor.author | Zhang, S. | en |
| dc.contributor.author | Vieu, C. | en |
| dc.contributor.author | Launois, H. | en |
| dc.contributor.author | Gautier, J. | en |
| dc.contributor.author | Jourdan, F. | en |
| dc.contributor.author | Palun, L. | en |
| dc.date.accessioned | 2015-11-24T17:34:27Z | - |
| dc.date.available | 2015-11-24T17:34:27Z | - |
| dc.identifier.issn | 0168-583X | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13970 | - |
| dc.rights | Default Licence | - |
| dc.subject | si | en |
| dc.subject | ge | en |
| dc.subject | implantation | en |
| dc.subject | sio2 | en |
| dc.subject | nanocrystals | en |
| dc.subject | glass transition | en |
| dc.title | Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000169403700011 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2001 | - |
| heal.abstract | The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing. (C) 2001 Elsevier Science B.V. All rights reserved. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Beltsios-2001-Formation of 2-D arrays.pdf | 208.4 kB | Adobe PDF | View/Open Request a copy |
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