Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13956
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dc.contributor.authorSkuras, E.en
dc.contributor.authorStanley, C. R.en
dc.date.accessioned2015-11-24T17:34:24Z-
dc.date.available2015-11-24T17:34:24Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13956-
dc.rightsDefault Licence-
dc.subjectmolecular-beam epitaxyen
dc.subjectelectronic-propertiesen
dc.subjectphotoreflectanceen
dc.subjectinalasen
dc.subjectin0.52al0.48asen
dc.subjectheterojunctionen
dc.subjectingaasen
dc.subjectlayersen
dc.titleFermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structuresen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1063/1.2716844-
heal.identifier.secondary<Go to ISI>://000245317100109-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2007-
heal.abstractFermi level pinning at the surface of the undoped In0.52Al0.48As Schottky layer in high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures has been studied. The electron subband densities for samples prepared with different Schottky layer thicknesses have been deduced from fast Fourier transform analyses of 1.5 K Shubnikov-de Haas data. These results have been compared with densities calculated self-consistently using the free surface potential Phi(S) as the only fitting parameter. Good agreement between theory and experiment is achieved for a surface Fermi energy pinned 0.65 +/- 0.05 eV below the In0.52Al0.48As Gamma-conduction band minimum. (c) 2007 American Institute of Physics.en
heal.publisherAmerican Institute of Physicsen
heal.journalNameApplied Physics Lettersen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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