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https://olympias.lib.uoi.gr/jspui/handle/123456789/13947Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Normand, P. | en |
| dc.contributor.author | Beltsios, K. | en |
| dc.contributor.author | Tserepi, A. | en |
| dc.contributor.author | Aidinis, K. | en |
| dc.contributor.author | Tsoukalas, D. | en |
| dc.contributor.author | Cardinaud, C. | en |
| dc.date.accessioned | 2015-11-24T17:34:18Z | - |
| dc.date.available | 2015-11-24T17:34:18Z | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13947 | - |
| dc.rights | Default Licence | - |
| dc.subject | silicon etching | en |
| dc.subject | fluorocarbon film | en |
| dc.subject | masking | en |
| dc.subject | fluorocarbon plasma | en |
| dc.subject | silicon micromachining | en |
| dc.subject | mesa patterning | en |
| dc.title | A new masking method for protecting silicon surfaces during anisotropic silicon wet etching | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000176594700122 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2002 | - |
| heal.abstract | A room-temperature silicon masking approach based on the exposure of silicon to CHF3-based plasma is explored. This plasma treatment leads to ultra-thin (2-5 nm) films that consist of a fluorocarbon top layer and a sub-oxide lower layer and are appropriate for anisotropic wet etching masks. The mask resistance to anisotropic wet-etchants is studied as a function of film preparation parameters. Defect evolution is examined for two key film preparation conditions. Masks explored compare favourably with common masking materials such as SiO2 or Si3N4 in terms of achievable patterns and processing options compatible with standard silicon integrated circuit technology. In addition, the new masking method can be applied when sidewall-only wet etching of mesa patterns is desired. (C) 2002 Elsevier Science B.V. All rights reserved. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Microelectronic Engineering | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Beltsios-2002-A new masking method.pdf | 657.55 kB | Adobe PDF | View/Open Request a copy |
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