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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13942
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dc.contributor.authorSarakinos, K.en
dc.contributor.authorBraun, A.en
dc.contributor.authorZilkens, C.en
dc.contributor.authorMraz, S.en
dc.contributor.authorSchneider, J. M.en
dc.contributor.authorZoubos, H.en
dc.contributor.authorPatsalas, P.en
dc.date.accessioned2015-11-24T17:34:14Z-
dc.date.available2015-11-24T17:34:14Z-
dc.identifier.issn0257-8972-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13942-
dc.rightsDefault Licence-
dc.subjecthipimsen
dc.subjecthppmsen
dc.subjectdiamond-like carbonen
dc.subjectionized pvden
dc.subjecttetrahedral amorphous-carbonen
dc.subjectcross-sectional structureen
dc.subjectenergy-loss spectroscopyen
dc.subjecta-c-hen
dc.subjectthin-filmsen
dc.subjectdepositionen
dc.subjectionizationen
dc.subjectcoatingsen
dc.subjectmicrostructureen
dc.subjectmechanismen
dc.titleExploring the potential of high power impulse magnetron sputtering for growth of diamond-like carbon filmsen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDOI 10.1016/j.surfcoat.2011.11.032-
heal.identifier.secondary<Go to ISI>://000299713600011-
heal.identifier.secondaryhttp://ac.els-cdn.com/S0257897211011704/1-s2.0-S0257897211011704-main.pdf?_tid=2e3a359ffe0b99a70db1f01686c533e0&acdnat=1339756002_c68129342b6a296207e111976b0e6c37-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2012-
heal.abstractAmorphous carbon films are deposited employing high power impulse magnetron sputtering (HiPIMS) at pulsing frequencies of 250 Hz and 1 kHz. Films are also deposited by direct current magnetron sputtering (dcMS), for reference. In both HiPIMS and dcMS cases, unipolar pulsed negative bias voltages up to 150 V are applied to the substrate to tune the energy of the positively charged ions that bombard the growing film. Plasma analysis reveals that HiPIMS leads to generation of a larger number of ions with larger average energies, as compared to dcMS. At the same time, the plasma composition is not affected, with Ar+ ions being the dominant ionized species at all deposition conditions. Analysis of the film properties shows that HiPIMS allows for growth of amorphous carbon films with sp(3) bond fraction up to 45% and density up to 2.2 g cm(-3). The corresponding values achieved by dcMS are 30% and 2.05 g cm(-3), respectively. The larger fraction of sp(3) bonds and mass density found in films grown by HiPIMS are explained in light of the more intense ion irradiation provided by the HiPIMS discharge as compared to the dcMS one. (C) 2011 Elsevier B.V. All rights reserved.en
heal.publisherElsevieren
heal.journalNameSurface & Coatings Technologyen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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