Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13934Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Beltsios, K. | en |
| dc.contributor.author | Normand, P. | en |
| dc.contributor.author | Kapetanakis, E. | en |
| dc.contributor.author | Tsoukalas, D. | en |
| dc.contributor.author | Travlos, A. | en |
| dc.date.accessioned | 2015-11-24T17:34:09Z | - |
| dc.date.available | 2015-11-24T17:34:09Z | - |
| dc.identifier.issn | 0167-9317 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13934 | - |
| dc.rights | Default Licence | - |
| dc.subject | phase separation | en |
| dc.subject | glass transition | en |
| dc.subject | nanocrystals | en |
| dc.subject | electron irradiation | en |
| dc.subject | silica | en |
| dc.subject | nanolayer | en |
| dc.subject | ion-implantation | en |
| dc.subject | 2-d arrays | en |
| dc.subject | nanocrystals | en |
| dc.subject | si | en |
| dc.title | Evolution and control of the structure of a SiO2/semiconductor nanoelectronics material | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.secondary | <Go to ISI>://000176594700087 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2002 | - |
| heal.abstract | The study of a silica nanolayer implanted by semiconductor (germanium or silicon) species offers unique insights regarding the structural evolution and, ultimately, the controlled fabrication of nanoelectronics multiphase materials through one or more phase transformation steps. A description integrating important restructuring phenomena identified so far is provided and special emphasis is placed upon the interpretation and consequences of new transmission electron microscopy observations of in situ phase separation of Ge-implanted nanolayers. (C) 2002 Elsevier Science B.V. All rights reserved. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Microelectronic Engineering | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Beltsios-2002-Evolution and control.pdf | 460.61 kB | Adobe PDF | View/Open Request a copy |
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