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https://olympias.lib.uoi.gr/jspui/handle/123456789/13907Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Skuras, E. | en |
| dc.contributor.author | Holland, M. C. | en |
| dc.contributor.author | Barton, C. J. | en |
| dc.contributor.author | Davies, J. H. | en |
| dc.contributor.author | Long, A. R. | en |
| dc.date.accessioned | 2015-11-24T17:33:53Z | - |
| dc.date.available | 2015-11-24T17:33:53Z | - |
| dc.identifier.issn | 0268-1242 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13907 | - |
| dc.rights | Default Licence | - |
| dc.subject | dx centers | en |
| dc.subject | alxga1-xas alloys | en |
| dc.subject | gaas | en |
| dc.subject | mobility | en |
| dc.title | Electron-Transport in Shallow Heterostructures with Algaas and Alas Barriers | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1088/0268-1242/10/7/004 | - |
| heal.identifier.secondary | <Go to ISI>://A1995RH07100004 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 1995 | - |
| heal.abstract | Two series of shallow GaAs heterostructures, with AlGaAs and AlAs barriers respectively and both delta-doped with around 4 x 10(16) m(-2) Si donors, have been studied using low-temperature magnetotransport techniques. The electrons in these structures were confined against interfaces 28 nm from the surface. The AlGaAs barrier samples depleted at a uniform rate with bias under a Schottky gate, but the carrier mobility was considerably greater at all biases than predicted assuming randomly positioned donors. The depletion and mobility data for the AlAs barrier samples could only be explained by postulating the existence of a pool of electrons around the doping plane, which screened the donors to produce high mobilities in ungated samples but which could be removed by the application of gate bias. Bias cooling experiments on the AlGaAs samples showed that a proportion of the donor centres were occupied when samples with as few as 4 x 10(16) m(-2) donors were cooled without bias. The mobility data from such samples are discussed assuming correlations between the positions of these occupied donors. | en |
| heal.publisher | IOP Publishing Ltd | en |
| heal.journalName | Semiconductor Science and Technology | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Skuras-1995-Ele.pdf | 648.1 kB | Adobe PDF | View/Open Request a copy |
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