1. Repository of OAI
  2. ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
  3. Σχολή Θετικών Επιστημών
  4. Τμήμα Μηχανικών Επιστήμης Υλικών
  5. Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)
Ελληνικά   English  
Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13854
Full metadata record
DC FieldValueLanguage
dc.contributor.authorNormand, P.en
dc.contributor.authorKapetanakis, E.en
dc.contributor.authorDimitrakis, P.en
dc.contributor.authorTsoukalas, D.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorCherkashin, N.en
dc.contributor.authorBonafos, C.en
dc.contributor.authorBenassayag, G.en
dc.contributor.authorCoffin, H.en
dc.contributor.authorClaverie, A.en
dc.contributor.authorSoncini, V.en
dc.contributor.authorAgarwal, A.en
dc.contributor.authorAmeen, M.en
dc.date.accessioned2015-11-24T17:33:23Z-
dc.date.available2015-11-24T17:33:23Z-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13854-
dc.rightsDefault Licence-
dc.subjectimplantationen
dc.subjectstatesen
dc.titleEffect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesisen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1063/1.1588378-
heal.identifier.secondary<Go to ISI>://000183877800057-
heal.identifier.secondaryhttp://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000083000001000168000001-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2003-
heal.abstractThe effect of annealing in diluted oxygen versus inert environment on the structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by very low-energy silicon implantation (1 keV) is reported. Annealing in diluted oxygen increases the thickness of the control oxide, improves the integrity of the oxide and narrows the size distribution of the nanocrystals without affecting significantly their mean size (similar to2 nm). Strong charge storage effects at low gate voltages and enhanced charge retention times are observed through electrical measurements of metal-oxide-semiconductor capacitors. These results indicate that a combination of low-energy silicon implants and annealing in diluted oxygen allows for the fabrication of improved low-voltage nonvolatile memory devices. (C) 2003 American Institute of Physics.en
heal.publisherAmerican Institute of Physicsen
heal.journalNameApplied Physics Lettersen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

Show simple item record
Files in This Item:
File Description SizeFormat 
Beltsios-2003-Effect of annealing environment.pdf421.98 kBAdobe PDFView/Open
Show simple item record  


This item is licensed under a Creative Commons License Creative Commons