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https://olympias.lib.uoi.gr/jspui/handle/123456789/13823Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jensen, K. F. | en |
| dc.contributor.author | Fotiadis, D. I. | en |
| dc.contributor.author | Mountziaris, T. J. | en |
| dc.date.accessioned | 2015-11-24T17:33:09Z | - |
| dc.date.available | 2015-11-24T17:33:09Z | - |
| dc.identifier.issn | 0022-0248 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13823 | - |
| dc.rights | Default Licence | - |
| dc.subject | chemical-vapor-deposition | en |
| dc.subject | 001 gaas | en |
| dc.subject | reactors | en |
| dc.subject | flow | en |
| dc.subject | decomposition | en |
| dc.subject | growth | en |
| dc.subject | cvd | en |
| dc.subject | temperature | en |
| dc.title | Detailed Models of the Movpe Process | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1016/0022-0248(91)90428-8 | - |
| heal.identifier.secondary | <Go to ISI>://A1991EY07200002 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 1991 | - |
| heal.abstract | We present physicochemical models of the MOVPE process that describe two- and three-dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors. Emphasis is placed on understanding the development of fully three-dimensional flows and on the interaction between transport and chemical reaction processes. The first fully three-dimensional finite element computations of non-axisymmetric flows in vertical MOVPE reactors are presented along with a discussion of conditions leading to loss of symmetry in axisymmetric reactor configurations. For horizontal reactors, three-dimensional simulations are used to predict published interference holography observations of cold finger phenomena and to investigate the disappearance of symmetry about the reactor midplane. A detailed kinetic model for epitaxial growth of GaAs from trimethylgallium and arsine is combined with fluid flow and heat transfer models for a typical horizontal MOVPE reactor. The model simulates GaAs growth rates and carbon incorporation trends with temperature, pressure and V/III ratio. The computations show that the wall temperature plays a critical role in controlling uniformity. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Journal of Crystal Growth | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Fotiadis-1991-Detailed models of.pdf | 809.46 kB | Adobe PDF | View/Open Request a copy |
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