Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13803
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dc.contributor.authorNormand, P.en
dc.contributor.authorBeltsios, K.en
dc.contributor.authorTserepi, A.en
dc.contributor.authorAidinis, K.en
dc.contributor.authorTsoukalas, A.en
dc.contributor.authorCardinaud, C.en
dc.date.accessioned2015-11-24T17:32:58Z-
dc.date.available2015-11-24T17:32:58Z-
dc.identifier.issn1099-0062-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13803-
dc.rightsDefault Licence-
dc.subjectfabricationen
dc.subjectsurfacesen
dc.subjectdamageen
dc.titleA masking approach for anisotropic silicon wet etchingen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.secondary<Go to ISI>://000170903900014-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate2001-
heal.abstractA new simple and rapid room-temperature silicon masking approach based on the exposure of silicon to CHF3-based plasma is presented. This plasma treatment leads to silicon surface modifications appropriate for masking purposes during anisotropic etching in ethylenediamine-pyrocatechol-water (EPW) solutions. The resistance of the mask to EPW etching solutions is studied as a function of plasma radio frequency power and pressure, plasma duration, silicon surface preparation, and aging. Mask resistance increases with increasing power density and decreasing pressure. Plasma duration has a significant effect on the temporal and spatial pattern of defects that evolve during etching and lead eventually to mask destruction. (C) 2001 The Electrochemical Society.en
heal.publisherElectrochemical Societyen
heal.journalNameElectrochemical and Solid State Lettersen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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