Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13753Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Patsalas, P. | en |
| dc.contributor.author | Charitidis, C. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.contributor.author | Dimitriadis, C. A. | en |
| dc.contributor.author | Valassiades, O. | en |
| dc.date.accessioned | 2015-11-24T17:32:35Z | - |
| dc.date.available | 2015-11-24T17:32:35Z | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13753 | - |
| dc.rights | Default Licence | - |
| dc.subject | contacts | en |
| dc.subject | silicon | en |
| dc.title | Combined electrical and mechanical properties of titanium nitride thin films as metallization materials | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1063/1.371514 | - |
| heal.identifier.secondary | <Go to ISI>://000083189100086 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 1999 | - |
| heal.abstract | Titanium nitride (TiNx) thin films, similar to 100 nm thick, were deposited on Si(100) substrates by dc reactive magnetron sputtering. The effects of the substrate bias voltage and deposition temperature on their optical, electrical, and mechanical properties have been studied. It was found a strong correlation between the electrical and mechanical properties of the films which are significantly improved with increasing the substrate bias voltage and the deposition temperature. The low resistivity (43 mu Omega cm), combined with the high hardness and elastic modulus values, suggest the TiNx as a promising metallization material in Si technology. (C) 1999 American Institute of Physics. [S0021- 8979(99)05021-5]. | en |
| heal.publisher | American Institute of Physics | en |
| heal.journalName | Journal of Applied Physics | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Patsalas-1999-Com.pdf | 293.03 kB | Adobe PDF | View/Open Request a copy |
This item is licensed under a Creative Commons License
