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https://olympias.lib.uoi.gr/jspui/handle/123456789/13569Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Galdikas, A. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.contributor.author | Patsalas, P. | en |
| dc.contributor.author | Gioti, M. | en |
| dc.contributor.author | Pranevicius, L. | en |
| dc.date.accessioned | 2015-11-24T17:31:18Z | - |
| dc.date.available | 2015-11-24T17:31:18Z | - |
| dc.identifier.issn | 0925-9635 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13569 | - |
| dc.rights | Default Licence | - |
| dc.subject | amorphous carbon | en |
| dc.subject | deposition | en |
| dc.subject | modeling | en |
| dc.subject | ellipsometry | en |
| dc.subject | a-c-h | en |
| dc.subject | thin-films | en |
| dc.subject | optical-properties | en |
| dc.subject | diamond | en |
| dc.subject | stress | en |
| dc.title | The kinetics of sputtered deposited carbon on silicon: a phenomenological model | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1016/S0925-9635(98)00385-9 | - |
| heal.identifier.secondary | <Go to ISI>://000080437000073 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 1999 | - |
| heal.abstract | A phenomenological model based on the rate equations for the carbon sputter deposition on Si surface is proposed. The processes of carbon adsorption, formation of SiC and transition from sp(2) to sp(3) sites induced by low energy ion bombardment are included. The calibration of the model was performed with the experimental results. The amorphous carbon films were deposited by magnetron sputtering of graphite with Ar+ ions. The energy of ions bombarding the growing film was varied by applying a bias voltage on the substrate. It is shown that the non-monotonous kinetics of film growth is determined by the variations of surface composition at different stages of growth. (C) 1999 Elsevier Science S.A. All rights reserved. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Diamond and Related Materials | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Patsalas-1999-The kinetics of sputtered.pdf | 149.46 kB | Adobe PDF | View/Open Request a copy |
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