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https://olympias.lib.uoi.gr/jspui/handle/123456789/13539Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Patsalas, P. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.date.accessioned | 2015-11-24T17:30:59Z | - |
| dc.date.available | 2015-11-24T17:30:59Z | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13539 | - |
| dc.rights | Default Licence | - |
| dc.subject | thin-films | en |
| dc.subject | deposition mechanism | en |
| dc.subject | beam bombardment | en |
| dc.subject | diamond | en |
| dc.subject | crystallization | en |
| dc.subject | nucleation | en |
| dc.subject | dependence | en |
| dc.subject | phase | en |
| dc.subject | transformation | en |
| dc.subject | breakdown | en |
| dc.title | The effect of postgrowth ion irradiation on the microstructure and the interface properties of amorphous carbon films on silicon | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1063/1.1323751 | - |
| heal.identifier.secondary | <Go to ISI>://000165543200028 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2000 | - |
| heal.abstract | We studied the effect of postgrowth low energy (1.5 keV) Ar+ ion irradiation of various amorphous carbon (a-C) films with different microstructure and bonding. Detailed x-ray diffraction was used to identify the existing phases in thin (30-200 nm) a-C films, deposited on Si and subjected to Ar+ ion irradiation and to study the mechanisms of formation of diamond, lonsdaleite (diamond-2H), silicon carbide, and graphite grains. The relative content of each crystalline phase, the grain size, and distribution depend strongly on the microstructure of the as-grown films that is affected by the bias voltage applied during deposition of the films. Ion bombardment promoted the formation of graphite throughout the films and diamond and SiC grains close to the a-C/Si interface. Diamond and SIC nucleation at the a-C/Si interface area occurs beyond the penetration depth of the Ar+ ions and therefore is not attributed to a direct, ballistic ion-solid interaction but rather to a mechanism of charge transfer through conductivity channels. The latter is also considered and discussed in terms of other features of the as-grown a-C films such as density, voids content, electrical resistivity, and surface and interface morphology. (C) 2000 American Institute of Physics. [S0021-8979(00)06224-1]. | en |
| heal.publisher | American Institute of Physics | en |
| heal.journalName | Journal of Applied Physics | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Patsalas-2000-The ef.pdf | 484.66 kB | Adobe PDF | View/Open Request a copy |
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