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Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/13538
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dc.contributor.authorHolland, M. C.en
dc.contributor.authorSkuras, E.en
dc.contributor.authorDavies, J. H.en
dc.contributor.authorLarkin, I. A.en
dc.contributor.authorLong, A. R.en
dc.contributor.authorStanley, C. R.en
dc.date.accessioned2015-11-24T17:30:58Z-
dc.date.available2015-11-24T17:30:58Z-
dc.identifier.issn0022-0248-
dc.identifier.urihttps://olympias.lib.uoi.gr/jspui/handle/123456789/13538-
dc.rightsDefault Licence-
dc.subjectlayersen
dc.titleThe Effect of Growth Temperature, Delta-Doping and Barrier Composition on Mobilities in Shallow Algaas-Gaas 2-Dimensional Electron Gasesen
heal.typejournalArticle-
heal.type.enJournal articleen
heal.type.elΆρθρο Περιοδικούel
heal.identifier.primaryDoi 10.1016/0022-0248(95)80132-V-
heal.identifier.secondary<Go to ISI>://A1995RD43300102-
heal.languageen-
heal.accesscampus-
heal.recordProviderΠανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικώνel
heal.publicationDate1995-
heal.abstractA series of two-dimensional electron gas (2DEG) structures have been grown with the 2DEG only 28 nm from the surface. The effects of growth temperature and delta-doping density have been investigated, and a comparison has been made between AlAs and Al0.3Ga0.7As barriers. A mobility of 330,000 cm(2) V-1 s(-1) at 4 K has been measured for a shallow 2DEG with an Al0.3Ga0.7As barrier, which is the highest reported for such a structure.en
heal.publisherElsevieren
heal.journalNameJournal of Crystal Growthen
heal.journalTypepeer reviewed-
heal.fullTextAvailabilityTRUE-
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