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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Patsalas, P. | en |
| dc.contributor.author | Handrea, M. | en |
| dc.contributor.author | Logothetidis, S. | en |
| dc.contributor.author | Gioti, M. | en |
| dc.contributor.author | Kennou, S. | en |
| dc.contributor.author | Kautek, W. | en |
| dc.date.accessioned | 2015-11-24T17:30:54Z | - |
| dc.date.available | 2015-11-24T17:30:54Z | - |
| dc.identifier.issn | 0925-9635 | - |
| dc.identifier.uri | https://olympias.lib.uoi.gr/jspui/handle/123456789/13528 | - |
| dc.rights | Default Licence | - |
| dc.subject | amorphous carbon | en |
| dc.subject | electron spectroscopy | en |
| dc.subject | ellipsometry | en |
| dc.subject | sputtering | en |
| dc.subject | thin-films | en |
| dc.subject | diamond films | en |
| dc.subject | sp(3) content | en |
| dc.subject | xps | en |
| dc.subject | ellipsometry | en |
| dc.subject | graphite | en |
| dc.subject | density | en |
| dc.title | A complementary study of bonding and electronic structure of amorphous carbon films by electron spectroscopy and optical techniques | en |
| heal.type | journalArticle | - |
| heal.type.en | Journal article | en |
| heal.type.el | Άρθρο Περιοδικού | el |
| heal.identifier.primary | Doi 10.1016/S0925-9635(00)00480-5 | - |
| heal.identifier.secondary | <Go to ISI>://000168730600125 | - |
| heal.language | en | - |
| heal.access | campus | - |
| heal.recordProvider | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών | el |
| heal.publicationDate | 2001 | - |
| heal.abstract | A complementary study of composition and bonding of sputtered a-C films, deposited on Si(001) substrates with various bias voltages (V-b) applied to the substrate during deposition is presented. The sp(3) and sp(3) fractions in the films were calculated by deconvolution of the X-ray photoelectron spectroscopy (XPS) Cls peak and studied by the differential auger electron spectroscopy (AES) C1s peak signal. The results of this analysis are compared with the estimation of sp(3) fraction calculated by spectroscopic ellipsometry (SE) and validated using density measurements by X-ray reflectivity. It was observed a considerable increase of sp(3) content in films deposited with negative V-b. The respective sp(3) and sp(2) fractions and Ar concentration with respect to the V-b and the depth profile analysis give valuable information on the deposition mechanism of the sputtered a-C films. XPS valence band spectra provided the electron density of states in the a-C films' valence band. The characteristic broad p band of diamond was prominent in most of the films. The valence band structure of the films was correlated with their optical response measured by SE. (C) 2001 Elsevier Science B.V. All rights reserved. | en |
| heal.publisher | Elsevier | en |
| heal.journalName | Diamond and Related Materials | en |
| heal.journalType | peer reviewed | - |
| heal.fullTextAvailability | TRUE | - |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Patsalas-2001-A complementary study of bonding.pdf | 112.35 kB | Adobe PDF | View/Open Request a copy |
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