Browsing by Author Evangelou, E. K.

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Showing results 1 to 17 of 17
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Anomalous charge trapping dynamics in cerium oxide grown on germanium substrateRahman, M. S.; Evangelou, E. K.; Dimoulas, A.; Mavrou, G.; Galata, S.24-Nov-2015-
Characterization of BaTiO3 thin films on p-SiEvangelou, E. K.; Konofaos, N.; Aslanoglou, X.; Kennou, S.; Thomas, C. B.24-Nov-2015-
Characterization of BaTiO3 thin films on p-SiEvangelou, E. K.; Konofaos, N.; Aslanoglou, X.; Kennou, S.; Thomas, C. B.24-Nov-2015-
Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal-oxide-semiconductor devicesEvangelou, E. K.; Konofaos, N.; Aslanoglou, X. A.; Dimitriadis, C. A.; Patsalas, P.; Logothetidis, S.; Kokkoris, M.; Kossionides, E.; Vlastou, R.; Groetschel, R.24-Nov-2015-
Current instabilities in rare-earth oxides-HfO(2) gate stacks grown on germanium based metal-oxide-semiconductor devices due to Maxwell-Wagner instabilities and dielectrics relaxationRahman, M. S.; Evangelou, E. K.; Dimoulas, A.; Mavrou, G.; Galata, S.24-Nov-2015-
Current Transport Mechanism in High-kappa Cerium Oxide Gate Dielectrics Grown on Germanium SubstratesRahman, M. S.; Evangelou, E. K.; Androulidakis, I. I.; Dimoulas, A.24-Nov-2015-
Dielectric properties and electronic transitions of porous and nanostructured cerium oxide filmsLogothetidis, S.; Patsalas, P.; Evangelou, E. K.; Konofaos, N.; Tsiaoussis, I.; Frangis, N.24-Nov-2015-
Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devicesKonofaos, N.; Evangelou, E. K.; Aslanoglou, X.; Kokkoris, M.; Vlastou, R.24-Nov-2015-
Electrical properties of La(2)O(3) and HfO(2)/La(2)O(3) gate dielectrics for germanium metal-oxide-semiconductor devicesMavrou, G.; Galata, S.; Tsipas, P.; Sotiropoulos, A.; Panayiotatos, Y.; Dirnoulas, A.; Evangelou, E. K.; Seo, J. W.; Dieker, C.24-Nov-2015-
Fermi-level pinning and charge neutrality level in germaniumDimoulas, A.; Tsipas, P.; Sotiropoulos, A.; Evangelou, E. K.24-Nov-2015-
Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectricMavrou, G.; Galata, S. F.; Sotiropoulos, A.; Tsipas, P.; Panayiotatos, Y.; Dimoulas, A.; Evangelou, E. K.; Seo, J. W.; Dieker, C.24-Nov-2015-
Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO(2)/Dy(2)O(3) gate stacks grown on Ge (100) substratesRahman, M. S.; Evangelou, E. K.; Androulidakis, I. I.; Dimoulas, A.; Mavrou, G.; Tsipas, P.24-Nov-2015-
Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germaniumGalata, S. F.; Evangelou, E. K.; Panayiotatos, Y.; Sotiropoulos, A.; Dimoulas, A.24-Nov-2015-
Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd(2)O(3)/Ge capacitorsEvangelou, E. K.; Mavrou, G.; DimoulaS, A.; Konofaos, N.24-Nov-2015-
SILC decay in La(2)O(3) gate dielectrics grown on Ge substrates subjected to constant voltage stressRahman, M. S.; Evangelou, E. K.; Androulidakis, I. I.; Dimoulas, A.; Mavrou, G.; Galata, S.24-Nov-2015-
Structural and electrical properties of HfO(2)/Dy(2)O(3) gate stacks on Ge substratesEvangelou, E. K.; Rahman, M. S.; Androulidakis, I. I.; Dimoulas, A.; Mavrou, G.; Giannakopoulos, K. P.; Anagnostopoulos, D. F.; Valicu, R.; Borchert, G. L.24-Nov-2015-
Study of stress-induced leakage current (SILC) in HfO(2)/Dy(2)O(3) high-kappa gate stacks on germaniumRahman, M. S.; Evangelou, E. K.; Androulidakis, I. I.; Dimoulas, A.24-Nov-2015-