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Author
8
Kapetanakis, E.
8
Normand, P.
8
Tsoukalas, D.
4
Agarwal, A.
4
Ameen, M.
4
Bonafos, C.
4
Claverie, A.
4
Dimitrakis, P.
4
Soncini, V.
3
Benassayag, G.
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nanocrystals
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2-d arrays
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si
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ion beam synthesis
3
silicon nanocrystals
3
states
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memory
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nanocrystal memory
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non-volatile memory
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silicon implantation
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2004
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2001
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ΑΠΟΘΕΤΗΡΙΟ "ΟΛΥΜΠΙΑΣ"
Σχολή Θετικών Επιστημών
Τμήμα Μηχανικών Επιστήμης Υλικών
Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)
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Influence of implantation dose on the charge storage characteristics of MOS memory devices with low energy Si implanted gate oxides (Journal article)
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis (Journal article)
Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis (Journal article)
Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films (Journal article)
Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications (Journal article)
Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications (Journal article)
MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation (Journal article)
Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis (Journal article)