Please use this identifier to cite or link to this item: https://olympias.lib.uoi.gr/jspui/handle/123456789/16998
Title: Structural and electrical properties of HfO(2)/Dy(2)O(3) gate stacks on Ge substrates
Institution and School/Department of submitter: Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών
Keywords: germanium,dy(2)o(3),hfo(2),rare-earth oxides,transmission electron microscopy,x-ray reflectivity,electrical properties and measurements,germanium mos dielectrics,hfo2 layers,interface,oxide,capacitors,mosfets,devices,passivation,deposition,surfaces
URI: https://olympias.lib.uoi.gr/jspui/handle/123456789/16998
ISSN: 0040-6090
Link: <Go to ISI>://000278064600068
http://ac.els-cdn.com/S0040609009018446/1-s2.0-S0040609009018446-main.pdf?_tid=14effd51ea3786a451c9d0943ff4e602&acdnat=1334220025_508eb8dc63afd1ec2df42bb61b752d54
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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