CMOS Monolithic Active Pixel Sensors (MAPS): Developments and future outlook (Journal article)

Turchetta, R./ Fant, A./ Gasiorek, P./ Esbrand, C./ Griffiths, J. A./ Metaxas, M. G./ Royle, G. J./ Speller, R./ Venanzi, C./ van der Stelt, P. F./ Verheij, H./ Li, G./ Theodoridis, S./ Georgiou, H./ Cavouras, D./ Hall, G./ Noy, M./ Jones, J./ Leaver, J./ Machin, D./ Greenwood, S./ Khaleeq, M./ Schulerud, H./ Ostby, J. M./ Triantis, F./ Asimidis, A./ Bolanakis, D. E./ Manthos, N./ Longo, R./ Bergamaschi, A.


Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end applications, for example web-cams, and is slowly pervading the high-end applications, for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements. This paper will present a brief overview of the CMOS Image Sensor technology and of the requirements for scientific applications. As an example, a sensor for X-ray imaging will be presented. This sensor was developed within a European FP6 Consortium, intelligent imaging sensors (I-ImaS). (c) 2007 Elsevier B.V. All rights reserved.
Institution and School/Department of submitter: Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών
URI: http://olympias.lib.uoi.gr/jspui/handle/123456789/16509
ISSN: 0168-9002
Link: <Go to ISI>://WOS:000251928000036
http://ac.els-cdn.com/S0168900207015896/1-s2.0-S0168900207015896-main.pdf?_tid=5883b80e98738244967706f24582e072&acdnat=1334229925_bd2f54d9dca0d08e713df0dd665f14cd
Appears in Collections:Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)

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