Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/16152| Title: | Fermi-level pinning and charge neutrality level in germanium |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Επιστημών και Τεχνολογιών. Τμήμα Βιολογικών Εφαρμογών και Τεχνολογιών |
| Keywords: | schottky barriers,band offsets,ge,mosfets,gate,source/drain,gap |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/16152 |
| ISSN: | 0003-6951 |
| Link: | <Go to ISI>://000243415200051 http://link.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000089000025252110000001 |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) - ΦΥΣ |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Dimoulas-2006-Fermi-level pinning.pdf | 534.46 kB | Adobe PDF | View/Open |
This item is licensed under a Creative Commons License
