Graphene production by dissociation of camphor molecules on nickel substrate (Journal article)
Ravani, F./ Papagelis, K./ Dracopoulos, V./ Parthenios, J./ Dassios, K. G./ Siokou, A./ Galiotis, C.
A chemical vapor deposition (CVD) process for the production of continuous-high quality-graphene layers based on camphor decomposition on polycrystalline Ni foil, is demonstrated. In situ X-ray diffraction at the pyrolysis temperature of the Ni foil indicates the presence of dominant Ni < 111 > grains which play an important role in the carbon nucleation and growth. The topography of the grown graphene layers is studied by scanning electron microscopy and atomic force microscopy which show that the Ni surface is covered by continuous and wrinkled graphene carpets. Raman spectroscopy reveals the high quality of the graphene film which appears to be only a few monolayers thick. X-ray photoelectron spectroscopy indicates the existence of graphitic layers and the absence of any spectral features associated with carbides (NixC). The proposed CVD process is a sufficient method for large scale production of graphene films. (C) 2012 Elsevier B. V. All rights reserved.
|Institution and School/Department of submitter:||Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών|
|Keywords:||graphene,chemical vapor deposition,raman spectroscopy,camphor,chemical-vapor-deposition,few-layer graphene,raman-spectroscopy,single-layer,growth,films,graphite,compression,scattering,monolayer|
|Link:||<Go to ISI>://000314037200006|
|Appears in Collections:||Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά)|
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