Please use this identifier to cite or link to this item:
https://olympias.lib.uoi.gr/jspui/handle/123456789/13735| Title: | Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering |
| Institution and School/Department of submitter: | Πανεπιστήμιο Ιωαννίνων. Σχολή Θετικών Επιστημών. Τμήμα Μηχανικών Επιστήμης Υλικών |
| Keywords: | thin-films,titanium nitride,barrier diodes,1/f noise,in-situ,ti-w,silicon,defects,contacts,metal |
| URI: | https://olympias.lib.uoi.gr/jspui/handle/123456789/13735 |
| ISSN: | 0021-8979 |
| Link: | <Go to ISI>://000079848600043 |
| Publisher: | American Institute of Physics |
| Appears in Collections: | Άρθρα σε επιστημονικά περιοδικά ( Ανοικτά) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Patsalas-1999-Cha.pdf | 344.22 kB | Adobe PDF | View/Open Request a copy |
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